环境友好型
化学
等离子体
温室气体
沉积(地质)
环境化学
分析化学(期刊)
生态学
古生物学
沉积物
生物
物理
量子力学
作者
Surin An,Jeong Eun Choi,Ju Eun Kang,Jiseok Lee,Sang Jeen Hong
出处
期刊:IEEE Transactions on Semiconductor Manufacturing
[Institute of Electrical and Electronics Engineers]
日期:2024-02-14
卷期号:37 (2): 207-221
标识
DOI:10.1109/tsm.2024.3365827
摘要
Semiconductor industry is experiencing a rising demand for environmentally friendly processes with the emphasis on green policies and worldwide environmental sustainability. Nitrogen trifluoride (NF3), the most common plasma chamber cleaning agent gas, poses a significant concern as a potent greenhouse gas since it has global warming potential (GWP), 740 times and 6 times higher than that CO2 and N2O. This study investigated the exhaust gas using quadrupole mass spectroscopy (QMS) and analyzed the change in cleaning speed and the type of exhaust gas through plasma monitoring using optical mass spectroscopy (OES). The objective is to lower the use of the amount of NF3 gas in chamber cleaning process to partially contribute the environmental sustainability in the point of semiconductor manufacturing. When a small amount of N2 was added to NF3 whose ratio of 7:23, the cleaning efficiency reached to 90 % compared to NF3 gas alone. Addition of N2 positively affected electron density and temperature to increase the F-radical in remote plasma system. In conclusion, 18 % of NF3 usage amount was reduced during the SiO2 deposition chamber cleaning process.
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