Preparation and study of double channel heterojunction IGTO/IGZO thin film transistor

In this paper, the IGTO/IGZO TFT was prepared by using Indium Gallium Tin Oxide (IGTO) highly conductive metal oxide thin film in the active layer. The experiment showed that by changing the argon-oxygen ratio and the thickness of the active layer in anterior and posterior channels, the different electrical properties of the active layer in anterior and posterior channels could be combined to give full play to the structural advantages of the double-channel active layer. It can greatly improve the performance of IGTO/IGZO TFT devices, and its carrier mobility and current switching ratio are greatly improved. The typical parameters of IGTO/IGZO TFT devices prepared under optimal conditions are: saturation mobility (μsat) of 17.25 cm2/V·s, switching ratio of 9.7 × 106, threshold voltage of 0.6 V. Compared with IGTO single active layer device, the maximum saturated carrier mobility μsat of IGTO/IGZO is increased by 127 %.