密度泛函理论
单层
异质结
太阳能电池
材料科学
范德瓦尔斯力
凝聚态物理
工程物理
纳米技术
化学物理
化学
物理
光电子学
计算化学
量子力学
分子
作者
Ngangbam Bedamani Singh,Rajkumar Mondal,Jyotirmoy Deb,Debolina Paul,Utpal Sarkar
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2024-03-06
卷期号:7 (6): 6704-6711
被引量:3
标识
DOI:10.1021/acsanm.4c00884
摘要
Two-dimensional van der Waals heterostructures (vdW-HSs) have emerged as a promising method for designing high-performance nanoscale optoelectronic devices such as solar cells. Herein, we propose the vdW-HS BAs/MoSi2P4 within the context of density functional theory (DFT). The results demonstrate that the BAs/MoSi2P4 heterostructure showcases a direct band gap and exhibits a notable type II band alignment feature that enables the efficient charge separation of photoinduced electron–hole pairs. The optical absorption intensity of the individual monolayers (BAs and MoSi2P4) is significantly enhanced upon the formation of a vdW-HS. The carrier mobility of the vdW-HS is significantly high compared to that of the MoSi2P4 monolayer. The findings of our study demonstrate the potential of BAs/MoSi2P4 vdW-HS as a desirable candidate for next-generation optoelectronic devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI