Electronic properties by polarization-inducing of the F-GaN-H/SiC van der Waals hetero-structures

Atomic doping plays an important role in the fabrication of electronic devices. However, the atomic doping of two-dimensional materials is challenging as the thickness approaches the nanoscale. Self-doping, achieved through an asymmetric structure, can simplify the fabrication of electronic devices. In this study, the electronic properties of the F-GaN-H/SiC hetero-structures are investigated based on the first principles. The intrinsic polarization of the F-GaN-H leads to charge transfer resulting in self-doping. The spatial distribution of carriers in the F-GaN-H/SiC hetero-structures is reversed with polarization reversal. And p-type doped F-GaN-H and n-type doped SiC are achieved in polarization-down (Pd) hetero-structures, which is contrary to polarization-up (Pu) hetero-structures. The band gaps of the F-GaN-H/SiC hetero-structures are smaller than the intrinsic materials, and the band structures are modulated by polarization direction. For the Pu hetero-structures, a high hole mobility of 8.87×103 cm2 V−1 s−1 is achieved. The self-doping and the excellent transport properties of the F-GaN-H/SiC hetero-structures, with the tunable bandgap structures to polarization direction, not only simplify the fabrication of electronic devices but also demonstrate the potential application for optoelectronic and high-speed electronic devices.