记忆电阻器
计算机科学
物理不可克隆功能
加密
非易失性存储器
嵌入式系统
多边形(计算机图形学)
计算机硬件
密码学
电子工程
算法
工程类
计算机网络
帧(网络)
作者
Jiajuan Shi,Jiaqi Han,Jingyao Bian,Yongjun Dong,Ya Lin,Y Zhang,Ye Tao,Xiaoning Zhao,Guozhong Xing,Zhongqiang Wang,Zhongqiang Wang,Yichun Liu
摘要
In this work, we demonstrate the coexistence of nonvolatile memory (NVM) and volatile threshold switching (VTS) behaviors in an Ag-embedded sodium-alginate-based memristor using the current pulse mode. High and low compliance currents allow the device to present stable and reliable NVM and VTS behaviors, respectively. Specifically, NVM and VTS behaviors randomly occur under a compliance current of 40 μA. On this basis, four polygon Boolean operations (AND, OR, NOT, and XOR) and physical unclonable functions (PUFs) with an inter-class Hamming distance of 50.75% are demonstrated simultaneously in memristive devices. Adopting PUF keys, image encryption and decryption are implemented by executing the XOR logic operation. Our memristive devices have the ability of in-memory computing and providing PUFs simultaneously and thus great potential for hardware security applications.
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