材料科学
保留时间
切换时间
纳米线
光电子学
非易失性存储器
微晶
电阻式触摸屏
纳米技术
钙钛矿(结构)
卤化物
数据保留
电气工程
化学
结晶学
无机化学
工程类
冶金
色谱法
作者
Yuting Zhang,Swapnadeep Poddar,He Huang,Leilei Gu,Qianpeng Zhang,Yu Zhou,Shuai Yan,Sifan Zhang,Zhitang Song,Baoling Huang,Guozhen Shen,Zhiyong Fan
出处
期刊:Science Advances
[American Association for the Advancement of Science (AAAS)]
日期:2021-09-03
卷期号:7 (36)
被引量:38
标识
DOI:10.1126/sciadv.abg3788
摘要
Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX3; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI3 and ~7 × 109 s ultralong extrapolated retention time for polycrystalline MAPbCl3 NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI3 to MAPbCl3, culminating in the trade-off between the device switching speed and retention time.
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