光电探测器
暗电流
材料科学
蓝宝石
光电子学
基质(水族馆)
紫外线
光学
激光器
物理
海洋学
地质学
作者
Lakshay Gautam,Junhee Lee,Gail J. Brown,Manijeh Razeghi
标识
DOI:10.1109/jqe.2022.3154475
摘要
We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.
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