材料科学
铁电性
氮化物
锡
电容器
扩散阻挡层
X射线光电子能谱
光电子学
电极
泄漏(经济)
极化(电化学)
分析化学(期刊)
复合材料
电介质
图层(电子)
冶金
电气工程
电压
核磁共振
化学
经济
物理化学
宏观经济学
工程类
物理
色谱法
作者
Minki Kim,Sanghun Jeon,Junghyeon Hwang,Sanghun Jeon
摘要
Metal-nitride layers were used as tungsten (W)-diffusion barriers for ultra-thin (<5 nm) Hf0.5Zr0.5O2 (HZO)-based ferroelectric capacitors with W as the bottom electrode. The influence of various metal nitrides (e.g., TiN, HfN, and ZrN) on the leakage properties, ferroelectricity, and reliability of the HZO capacitors was systematically investigated to identify appropriate materials for use as diffusion barriers in TiN/HZO/W stack capacitors. All the metal-nitrides were observed to significantly suppress W diffusion, resulting in a reduced leakage current. A comparative study between diffusion barriers revealed that the TiN/HZO/W stack capacitor with a ZrN layer exhibited the largest remanent polarization (2Pr) of 23 μC/cm2, as well as the highest reliability. This was attributed to the ZrN forming a ZrO2 interfacial layer, which could contribute to polarization switching and improve reliability. We quantitatively calculated the interfacial capacitance by performing the pulse switching measurement. In addition, crystal structures and diffusion properties with various metal nitrides are evaluated by analyzing grazing-angle incidence x-ray diffraction and x-ray photoelectron spectroscopy. These results provide a guideline for the fabrication of ultrathin HZO-based capacitors with stable ferroelectricity, reduced leakage, and excellent reliability.
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