光电导性
光离子化
电离
兴奋剂
材料科学
电子
分析化学(期刊)
动力学
原子物理学
激发
光电子学
化学
物理
离子
核物理学
色谱法
有机化学
量子力学
作者
Aboulaye Traoré,Hironori Okumura,Takayasu Sakurai
标识
DOI:10.35848/1347-4065/ac7f6e
摘要
Abstract Photoconductivity transients in an unintentionally doped (UID) n-type β -Ga 2 O 3 layer are investigated at temperatures ranging from 90 to 210 K. Illumination of the β -Ga 2 O 3 layer with a 600 nm light pulse induces photoconductivity, which persists after the light is turned off. The origin of persistent photoconductivity (PPC) is probed using the temperature dependencies of the photoconductivity buildup and decay kinetics. Upon excitation by 600 nm light, the photoconductivity in the UID β -Ga 2 O 3 sample is related to the photoionization of two distinct deep levels with thermal ionization energies of 1.76 ± 0.07 eV (Franck–Condon energy D FC : 0.78 ± 0.24 eV) and 2 ± 0.08 eV ( D FC : 0.52 ± 0.15 eV). When the light is turned off, PPC is observed due to thermal capture barriers preventing the photo-generated electrons from relaxing back to deep levels. Capture barriers of 35 meV and 165 meV have been estimated using the temperature dependence of the PPC decay time constant. The experimentally detected deep levels are ascribed to deep donors, such as oxygen vacancies.
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