与非门
闪光灯(摄影)
CMOS芯片
电荷陷阱闪光灯
计算机科学
计算机硬件
电子工程
嵌入式系统
工程类
逻辑门
物理
光学
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2022-01-01
卷期号:: 119-158
被引量:2
标识
DOI:10.1016/b978-0-12-820758-1.00003-0
摘要
This chapter reviews the current NAND Flash technology status and future directions. The fundamental NAND Flash structure, device, and array operation principles will be discussed for both 2D and 3D NAND Flash devices. Different types of 3D-NAND Flash memories, floating-gate-based and charge-trap-based are being mass produced today and will be reviewed and compared. From an architectural point of view, there are two mainstream approaches as well, one approach using CMOS under the array (CUA) while the more conventional approach is using CMOS next to the array (CNA). Future scaling of 3D-NAND Flash memories and its challenges will be discussed in detail and the chapter will end with a discussion on future applications for 3D-NAND Flash memories.
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