中间层
材料科学
薄脆饼
光电子学
硅
基质(水族馆)
通过硅通孔
包装工程
纳米技术
机械工程
工程类
图层(电子)
蚀刻(微加工)
海洋学
地质学
作者
Vijay Sukumaran,Tapobrata Bandyopadhyay,Venky Sundaram,Rao Tummala
出处
期刊:IEEE Transactions on Components, Packaging and Manufacturing Technology
[Institute of Electrical and Electronics Engineers]
日期:2012-07-19
卷期号:2 (9): 1426-1433
被引量:246
标识
DOI:10.1109/tcpmt.2012.2204392
摘要
Interconnecting integrated circuits (ICs) and 3-D-ICs to the system board (printed circuit board) are currently achieved using organic or silicon-based interposers. Organic interposers face several challenges in packaging 2-D and 3-D-ICs beyond the 32-nm node, primarily due to their poor dimensional stability and coefficient of thermal expansion (CTE) mismatch to silicon. Silicon interposers made with back-end of line wafer processes can achieve the required wiring and I/O density, but their high-cost limit them to high-performance applications. Glass is proposed as a superior alternative to organic and silicon-based interposers for packaging of future ICs and 3-D-ICs with highest I/Os at lowest cost. This paper presents for the first time a novel thin and large panel glass interposer capable of scaling to 700 mm and larger panels with potential for significant cost reduction over interposers made on 200-mm or 300-mm wafers. The formation of small through vias at high speed has been the biggest technical barrier for the adoption of glass as an interposer and system substrate; and this paper describes pioneering research in via-formation in thin glass substrates, using a novel "polymer-on-glass" approach. Electrical modeling and design of through package vias (TPVs) in glass is discussed in detail, and the feasibility of 50-μm pitch TPVs in 180-μm thin glass substrates has been demonstrated. The excellent surface finish and low CTE of glass leads to increased I/O density, and increased functionality per unit area leading to system miniaturization.
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