Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

材料科学 过渡金属 氧化物 图层(电子) 基质(水族馆) 制作 金属 二硫化钼 晶体管 沉积(地质) 光电子学 化学工程 纳米技术 复合材料 冶金 化学 催化作用 电气工程 有机化学 沉积物 医学 生物 海洋学 地质学 工程类 替代医学 病理 古生物学 电压
作者
Chong-Rong Wu,Tung-Wei Chu,Kuan-Chao Chen,Shih‐Yen Lin
出处
期刊:Journal of Visualized Experiments [MyJoVE Corporation]
卷期号: (129)
标识
DOI:10.3791/56494
摘要

We have demonstrated that through the sulfurization of transition metal films such as molybdenum (Mo) and tungsten (W), large-area and uniform transition metal dichalcogenides (TMDs) MoS2 and WS2 can be prepared on sapphire substrates. By controlling the metal film thicknesses, good layer number controllability, down to a single layer of TMDs, can be obtained using this growth technique. Based on the results obtained from the Mo film sulfurized under the sulfur deficient condition, there are two mechanisms of (a) planar MoS2 growth and (b) Mo oxide segregation observed during the sulfurization procedure. When the background sulfur is sufficient, planar TMD growth is the dominant growth mechanism, which will result in a uniform MoS2 film after the sulfurization procedure. If the background sulfur is deficient, Mo oxide segregation will be the dominant growth mechanism at the initial stage of the sulfurization procedure. In this case, the sample with Mo oxide clusters covered with few-layer MoS2 will be obtained. After sequential Mo deposition/sulfurization and W deposition/sulfurization procedures, vertical WS2/MoS2 hetero-structures are established using this growth technique. Raman peaks corresponding to WS2 and MoS2, respectively, and the identical layer number of the hetero-structure with the summation of individual 2D materials have confirmed the successful establishment of the vertical 2D crystal hetero-structure. After transferring the WS2/MoS2 film onto a SiO2/Si substrate with pre-patterned source/drain electrodes, a bottom-gate transistor is fabricated. Compared with the transistor with only MoS2 channels, the higher drain currents of the device with the WS2/MoS2 hetero-structure have exhibited that with the introduction of 2D crystal hetero-structures, superior device performance can be obtained. The results have revealed the potential of this growth technique for the practical application of 2D crystals.
最长约 10秒,即可获得该文献文件

科研通智能强力驱动
Strongly Powered by AbleSci AI
科研通是完全免费的文献互助平台,具备全网最快的应助速度,最高的求助完成率。 对每一个文献求助,科研通都将尽心尽力,给求助人一个满意的交代。
实时播报
汉堡包应助hkxfg采纳,获得10
1秒前
2秒前
sw完成签到,获得积分10
2秒前
没有神的过往完成签到,获得积分10
3秒前
3秒前
4秒前
5秒前
5秒前
芋圆不圆完成签到,获得积分10
6秒前
招财不肥发布了新的文献求助10
7秒前
zxc111发布了新的文献求助10
7秒前
魔幻的从梦完成签到,获得积分10
7秒前
8秒前
Xiaoxiao应助sunyexuan采纳,获得10
9秒前
10秒前
11秒前
淼淼之锋完成签到 ,获得积分10
11秒前
赢赢完成签到 ,获得积分10
11秒前
12秒前
13秒前
科目三应助落落采纳,获得10
15秒前
67发布了新的文献求助10
15秒前
15秒前
溜溜完成签到,获得积分10
15秒前
xixi完成签到 ,获得积分10
16秒前
wanci应助科研通管家采纳,获得10
16秒前
撒上咖啡应助科研通管家采纳,获得10
16秒前
RC_Wang应助科研通管家采纳,获得10
16秒前
JamesPei应助科研通管家采纳,获得10
16秒前
酷波er应助科研通管家采纳,获得10
16秒前
琪琪扬扬发布了新的文献求助10
16秒前
sutharsons应助科研通管家采纳,获得30
16秒前
orixero应助科研通管家采纳,获得10
17秒前
研友_VZG7GZ应助科研通管家采纳,获得10
17秒前
科研通AI5应助科研通管家采纳,获得10
17秒前
清爽老九应助科研通管家采纳,获得20
17秒前
酷波er应助科研通管家采纳,获得10
17秒前
wanci应助科研通管家采纳,获得10
17秒前
香蕉觅云应助科研通管家采纳,获得10
17秒前
赘婿应助科研通管家采纳,获得10
17秒前
高分求助中
Continuum Thermodynamics and Material Modelling 3000
Production Logging: Theoretical and Interpretive Elements 2700
Social media impact on athlete mental health: #RealityCheck 1020
Ensartinib (Ensacove) for Non-Small Cell Lung Cancer 1000
Unseen Mendieta: The Unpublished Works of Ana Mendieta 1000
Bacterial collagenases and their clinical applications 800
El viaje de una vida: Memorias de María Lecea 800
热门求助领域 (近24小时)
化学 材料科学 生物 医学 工程类 有机化学 生物化学 物理 纳米技术 计算机科学 内科学 化学工程 复合材料 基因 遗传学 物理化学 催化作用 量子力学 光电子学 冶金
热门帖子
关注 科研通微信公众号,转发送积分 3527928
求助须知:如何正确求助?哪些是违规求助? 3108040
关于积分的说明 9287614
捐赠科研通 2805836
什么是DOI,文献DOI怎么找? 1540070
邀请新用户注册赠送积分活动 716904
科研通“疑难数据库(出版商)”最低求助积分说明 709808