生发中心
生物
细胞生物学
体外
幼稚B细胞
异位表达
CD40
B细胞
细胞分化
细胞培养
分子生物学
基因
免疫学
遗传学
抗体
细胞毒性T细胞
作者
Tracy C. Kuo,Arthur L. Shaffer,Joseph Haddad,Yong Sung Choi,Louis M. Staudt,Kathryn Calame
摘要
Memory B cells provide rapid protection to previously encountered antigens; however, how these cells develop from germinal center B cells is not well understood. A previously described in vitro culture system using human tonsillar germinal center B cells was used to study the transcriptional changes that occur during differentiation of human memory B cells. Kinetic studies monitoring the expression levels of several known late B cell transcription factors revealed that BCL-6 is not expressed in memory B cells generated in vitro, and gene expression profiling studies confirmed that BCL-6 is not expressed in these memory B cells. Furthermore, ectopic expression of BCL-6 in human B cell cultures resulted in formation of fewer memory B cells. In addition, the expression profile of in vitro memory B cells showed a unique pattern that includes expression of genes encoding multiple costimulatory molecules and cytokine receptors, antiapoptotic proteins, T cell chemokines, and transcription factors. These studies establish new molecular criteria for defining the memory B cell stage in human B cells.
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