Eletrical Conductivity of Antimony‐Doped Tin Dioxide Prepared by Hot Isostatic Pressing

High‐purity and high‐density tin dioxide doped with 1 × 10 20 /cm 3 antimony was prepared by hot isostatic pressing, and its electrical conductivity was measured over the temperature range 20° to 1200°C in various atmospheres. The conductivity decreased with increasing temperature and reached the value found in specimens normally sintered under the same conditions at normal pressure. The effect of microstructure on the carrier transport is discussed. Grain boundaries only slightly affect carrier transport at high temperatures.