逐次逼近ADC
有效位数
噪声整形
电子工程
CMOS芯片
噪音(视频)
计算机科学
相位噪声
电气工程
工程类
电容器
电压
人工智能
图像(数学)
作者
Zhijie Chen,Masaya Miyahara,Akira Matsuzawa
出处
期刊:IEICE Transactions on Electronics
[Institute of Electronics, Information and Communications Engineers]
日期:2016-01-01
卷期号:E99.C (8): 963-973
被引量:76
标识
DOI:10.1587/transele.e99.c.963
摘要
This paper proposes an opamp-free solution to implement single-phase-clock controlled noise shaping in a SAR ADC. Unlike a conventional noise shaping SAR ADC, the proposal realizes noise shaping by charge redistribution, which is a passive technique. The passive implementation has high power efficiency. Meanwhile, since the proposal maintains the basic architecture and operation method of a traditional SAR ADC, it retains all the advantages of a SAR ADC. Furthermore, noise shaping helps to improve the performance of SAR ADC and relaxes its non-ideal effects. Designed in a 65-nm CMOS technology, the prototype realizes 58-dB SNDR based on an 8-bit C-DAC at 50-MS/s sampling frequency. It consumes 120.7-µW power from a 0.8-V supply and achieves a FoM of 14.8-fJ per conversion step.
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