UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ∼ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed two distinct detection peaks in spectral responsivity, one at 365 nm and another at 850 nm, corresponding to band edges of GaN and α-In2Se3 respectively, with considerable rejection in visible spectrum. Normalised responsivity values were found out to be ∼70 mA/W at both 365 nm and 850 nm for the bias of -3V along with photo-to-dark current ratio of ∼665 and ∼75 in that order. The Devices also showed fast transient response with no persistent photoconductivity (PPC). The specific detectivity values estimated were ∼1011 Jones and ∼1010 Jones corresponding to illumination at 365 nm and 850 nm, respectively. Device showed ∼0.4 dependence on incident power at 365 nm. The device performance, post annealing was also studied. This study is expected to pave the way for new type of optoelectronic devices by integrating direct bandgap layered material like α-In2Se3 and wide bandgap semiconductors.