Growth and Properties of High Quality InAs Single Crystals

We grow 50mm-diameter InAs single crystals of 〈100〉 and 〈111〉 orientations with liquid encapsulated Czochralski (LEC) method.The segregation behavior,lattice hardening effect,and doping efficiency of n-type impurities S, Sn and p-type impurities Zn, Mn are studied.The lattice perfection of the InAs single crystal is studied with X-ray diffraction.The polishing,chemical etching and cleaning of an InAs wafer are analyzed.An epi-ready InAs polished single crystal wafer is realized.