Terahertz Generation (0.3–0.8THz) Achieved by Photomixer Based on Low-temperature Grown InGaAs Emitter

Continuous‐wave (CW) terahertz (THz) generation has been successfully achieved by low‐temperature grown (LTG) In1−xGaxAs (x = 0.47) epitaxial layer as a THz emitter and a photomixer module with dual‐wavelength laser as an optical beat source. The reflectance decay spectroscopy revealed a carrier lifetime of ∼ 2.5 ps in LTG‐InGaAs layer grown at 220 °C and subsequently in‐situ annealed at 550 °C for 10 min. The THz ouput characteristics are demonstrated in the range of 0.3–0.8 THz.