碳纳米管
石墨烯
纳米管
肖特基势垒
材料科学
碳纳米管量子点
碳纳米管场效应晶体管
纳米技术
肖特基二极管
光电子学
电压
场效应晶体管
晶体管
物理
二极管
量子力学
作者
Brandon Cook,William R. French,K. Varga
摘要
The properties of carbon nanotube-graphene junctions are investigated with first-principles electronic structure and electron transport calculations. Contact properties are found to be key factors in determining the performance of nanotube based electronic devices. In a typical single-walled carbon nanotube-metal junction, there is a p-type Schottky barrier of up to ∼0.4 eV which depends on the nanotube diameter. Calculations of the Schottky barrier height in carbon nanotube-graphene contacts indicate that low barriers of 0.09 eV and 0.04 eV are present in nanotube-graphene contacts ((8,0) and (10,0) nanotubes, respectively). Junctions with a finite contact region are investigated with simulations of the current-voltage characteristics. The results suggest the suitability of the junctions for applications and provide insight to explain recent experimental findings.
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