Switching Transients of Power Diode

The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability