量化(信号处理)
晶体管
场效应晶体管
量子
双闸门
阈值电压
电压
材料科学
光电子学
物理
MOSFET
量子力学
计算机科学
算法
作者
Shoubhik Gupta,Bahniman Ghosh,Shiromani Balmukund Rahi
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2015-02-01
卷期号:36 (2): 024001-024001
被引量:15
标识
DOI:10.1088/1674-4926/36/2/024001
摘要
We investigate the quantum-mechanical effects on the electrical properties of the double-gate junction-less field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation.
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