Effects of a PbTiO<SUB>3</SUB> Insertion Layer on the Morphological and Electromechanical Characteristics of Sol–Gel-Driven 0.2PZN–0.8PZT Piezoelectric Films for Energy Harvesters

This study investigated the morphological and electromechanical characteristics of 0.2PZN-0.8PZT films fabricated using a PbTiO3 layer. Crack-free 1-microm-thick films with a pure perovskite phase were obtained on Pt/Ti/SiO2/Si substrates using a modified sol-gel deposition method. A highly dense and smooth morphology and a high piezoelectric coefficient (d33) of 230 pC/N were observed in a 0.2PZN-0.8PZT film with a PbTiO3 insertion layer after annealing at 750 degrees C. The as-produced sol-gel-driven 0.2PZN-0.8PZT thin films are attractive for application to piezoelectrically operated microelectronic actuators, sensors, or energy harvesters due to their low facility cost, smooth surface, and excellent electromechanical characteristics.