像素
百叶窗
高动态范围成像
动态范围
光电二极管
高动态范围
电压
光学
图像传感器
物理
样品(材料)
计算机科学
光电子学
材料科学
量子力学
热力学
作者
Laurence Stark,Jeffrey M. Raynor,F. Lalanne,Robert Henderson
标识
DOI:10.1109/ted.2018.2867367
摘要
A 3.75-μm back-illuminated voltage-domain global shutter (GS) pixel is presented. The 10T pixel architecture presented contains two independently operable storage branches and supports dual-capture, high-dynamic-range (HDR) imaging and correlated double sampling functionality. Electronic shielding of the sample diffusions by the vertical photodiode is utilized to reach native and differential parasitic light sensitivities below -73.5 and -82.5 dB at 940 nm, respectively. A GS HDR image capture mode with minimal motion artifacts is also demonstrated.
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