镍
光电流
析氧
分解水
材料科学
化学工程
光电子学
纳米技术
表面光电压
无机化学
冶金
化学
电极
催化作用
电化学
物理化学
工程类
光催化
物理
量子力学
生物化学
光谱学
作者
Zhibin Luo,Bin Liu,Huimin Li,Xiaoxia Chang,Wenjin Zhu,Tuo Wang,Jinlong Gong
标识
DOI:10.1002/smtd.201900212
摘要
Abstract n‐type silicon (n‐Si) is a promising photoanode candidate for photoelectrochemical (PEC) water splitting. However, severe chemical corrosion, sluggish reaction kinetics as well as extremely low photovoltage are critical limitations hampering its PEC performance. This paper describes the introduction of a metallic nickel (Ni) thin film as a multifunctional layer that 1) forms a Schottky junction to extract a high photovoltage, 2) provides an electrocatalytic surface for oxygen evolution reaction (OER), and 3) protects Si against corrosion. Upon introducing a high‐quality Al 2 O 3 tunneling layer to optimize the Si/Ni interface and loading nickel oxide hydroxide to further accelerate the OER, this metal–insulator–semiconductor junction photoanode achieves a record high photovoltage of 640 mV and energy conversion efficiency of 3% in n‐Si based photoanodes without np or np + buried homojunction, yielding an air mass 1.5G photocurrent density of ≈28 mA cm −2 at 1.23 V (vs reversible hydrogen electrode) for oxygen evolution in alkaline solution with a stability of more than 80 h.
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