晶体管
数码产品
石墨烯
数字电子学
钥匙(锁)
纳米技术
材料科学
电气工程
制作
电子工程
计算机科学
电子线路
工程类
电压
病理
医学
计算机安全
替代医学
作者
Haimeng Zhang,Han Wang
出处
期刊:Wiley-VCH Verlag GmbH & Co. KGaA eBooks
[Wiley]
日期:2018-10-05
卷期号:: 55-90
被引量:1
标识
DOI:10.1002/9783527811861.ch3
摘要
The two-dimensional (2D) materials made it possible to explore the ultimately thin channel transistors and the opportunity for innovations in new device concepts. This chapter focuses on the electronics based on the 2D materials. It introduces the basic structure and characteristics of 2D-materials-based discrete transistors and discusses their device fabrication technology. The chapter provides a detailed description of how 2D materials transistors perform and how they can be integrated at the circuit level, with graphene and MoS2 as examples. Carrier mobility is one of the key parameters that describe the transport and conduction properties of materials. The chapter evaluates the performance of discrete radio frequency (RF) graphene-based field-effect transistor (GFET), and demonstrates the ICs based on GFET to show some unique new electronics concepts that graphene can enable. It shows that MoS2 is promising for the digital application due to its sharp turn-on, decent drive current, and high on/off ratio despite their moderate mobility.
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