兴奋剂
纳米技术
材料科学
场效应晶体管
晶体管
插层(化学)
工程物理
光电子学
化学
电气工程
工程类
电压
有机化学
作者
Peng Luo,Fuwei Zhuge,Qingfu Zhang,Yuqian Chen,Liang Lv,Yu Li Huang,Huiqiao Li,Tianyou Zhai
出处
期刊:Nanoscale horizons
[The Royal Society of Chemistry]
日期:2018-08-02
卷期号:4 (1): 26-51
被引量:278
摘要
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.
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