硅
纳米
锗
材料科学
光电子学
混合硅激光器
硅锗
蚀刻(微加工)
纳米技术
工程物理
工程类
复合材料
图层(电子)
标识
DOI:10.1109/cstic.2019.8755675
摘要
Selective Silicon-Germanium (SiGe) and Silicon (Si) etch chemistries have been developed with emphases on selectivity and enhanced substrate compatibilities. Both acidic- and alkaline-based chemistries have been demonstrated to provide effective selective SiGe etch. Alkaline-based chemistries are also shown to deliver satisfactory selective Si etch vs. SiGe. A unique one-step SiGe and Si dual-etch chemistry with robust substrate compatibility can provide excellent surface roughness and be readily tuned for etch selectivity.
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