材料科学
异质结
二硫化钨
二硫化钼
范德瓦尔斯力
薄脆饼
二硒化钨
保形涂层
石墨烯
纳米技术
塔菲尔方程
聚合物
半导体
光电子学
复合材料
涂层
电极
电化学
过渡金属
有机化学
物理化学
分子
化学
催化作用
作者
Stephen Boandoh,Frederick Osei-Tutu Agyapong-Fordjour,Soo Ho Choi,Joo Song Lee,Jihoon Park,Heedong Ko,Gyeongtak Han,Seok Joon Yun,Se-Hwan Park,Young‐Min Kim,Woochul Yang,Young Hee Lee,Soo Min Kim,Ki Kang Kim
标识
DOI:10.1021/acsami.8b16261
摘要
Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, and electrochemical devices. However, the construction of wafer-scale vdW heterostructures for practical applications is still limited due to the lack of well-established growth and transfer techniques. Herein, we report a method for the fabrication of wafer-scale 2D vdW heterostructures with an ultraclean interface between layers via the aid of a freestanding viscoelastic polymer support layer (VEPSL). The low glass transition temperature (Tg) and viscoelastic nature of the VEPSL ensure absolute conformal contact between 2D layers, enabling the easy pick-up of layers and attaching to other 2D layers. This eventually leads to the construction of random sequence 2D vdW heterostructures such as molybdenum disulfide/tungsten disulfide/molybdenum diselenide/tungsten diselenide/hexagonal boron nitride. Furthermore, the VEPSL allows the conformal transfer of 2D vdW heterostructures onto arbitrary substrates, irrespective of surface roughness. To demonstrate the significance of the ultraclean interface, the fabricated molybdenum disulfide/graphene heterostructure employed as an electrocatalyst yielded excellent results of 73.1 mV·dec–1 for the Tafel slope and 0.12 kΩ of charge transfer resistance, which are almost twice as low as that of the impurity-trapped heterostructure.
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