光电探测器
响应度
紫外线
热稳定性
灵敏度(控制系统)
材料科学
光电子学
物理
电子工程
工程类
量子力学
作者
Sanjeev Mani Yadav,Amritanshu Pandey
出处
期刊:IEEE Transactions on Nanotechnology
[Institute of Electrical and Electronics Engineers]
日期:2020-01-01
卷期号:19: 301-307
被引量:7
标识
DOI:10.1109/tnano.2020.2983964
摘要
This paper reports a SnS 2 nanoflakes based UV photodetector having high sensitivity and thermal stability upto 120°C. Simple and low cost solvothermal technique has been used to synthesize SnS 2 nanoflakes of close to hexagonal shapes. A simple photoconductor structure on SiO 2 /Si substrate is fabricated by using Agas contact material. The resultant device has good sensitivity (~400), responsivity (~5.5 A/W), EQE (~1868%), detectivity (~1.72 × 10 13 Jones) and low response time (~2.2 s). The reported characteristics are superior to many other UV photodetectors utilizing complex hybrid structure of the device, either in form of additional filter layer or nanostructural light sensitive material.
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