Plasmon‐Enhanced InGaZnO Ultraviolet Photodetectors Tuned by Ferroelectric HfZrO

Abstract Indium–gallium–zinc oxide (IGZO) is widely used in liquid crystal panels, which are well suited for ultraviolet (UV) photodetectors due to a suitable bandgap and outstanding electrical properties. However, the poor performance for high dark current and low photoresponsivity limits practical applications of IGZO in UV photodetection. Here, a ferroelectric hafnium zirconium oxide (HfZrO) film is introduced to depress dark current and increase the sensitivity by strong ferroelectric‐localized field. Meanwhile, gold nanoparticles are used to enhance the photoresponsivity by localized surface plasmon resonance. With optimized designs, the photodetectors achieve a photoresponsivity of 714.6 A W –1 , a dark current of 1.1 × 10 −12 A, and a detectivity of 5.4 × 10 12 Jones. Furthermore, the response time at rising and falling edge is as low as 40 and 10 ms, respectively. The performance of the photodetector is far beyond traditional IGZO UV photodetectors. This study establishes a new approach to produce ultraviolet photodetectors with high photoresponsivity, low dark current, high sensitivity, and fast response for further practical applications.