薄脆饼
电容器
静电放电
材料科学
光电子学
前端和后端
电气工程
电子工程
工程类
机械工程
电压
作者
Michael Hosch,M. Lanz,Holger Weiner,D. Behammer
出处
期刊:IEEE Transactions on Semiconductor Manufacturing
[Institute of Electrical and Electronics Engineers]
日期:2019-11-01
标识
DOI:10.1109/tsm.2019.2933013
摘要
The semi-insulating characteristics of GaAs substrates makes GaAs front end manufacturing sensitive to ESD events occurring during wafer processing. Charges induced to the wafer by these ESD events can harm or even destroy insulating structures like MIM capacitors because these charges cannot dissipate. This paper deals with the modelling and control of backside-induced ESD defects on MIM capacitors. It will highlight how charges can be induced to the wafer from its backside by wet-chemical processes and consequently destroy MIM capacitors at the wafer front side. Furthermore, we will explain how the DI water resistivity is the root cause for these defects and how it can be controlled to prevent the creation of ESD defects.
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