碳化硅
功率半导体器件
材料科学
硅
宽禁带半导体
电气工程
功率(物理)
光电子学
电压
工程物理
电子工程
工程类
物理
冶金
量子力学
作者
Xu She,Alex Q. Huang,Óscar Lucía,Burak Ozpineci
出处
期刊:IEEE Transactions on Industrial Electronics
[Institute of Electrical and Electronics Engineers]
日期:2017-01-17
卷期号:64 (10): 8193-8205
被引量:1093
标识
DOI:10.1109/tie.2017.2652401
摘要
Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.
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