光电导性
碲化镉光电
钒
兴奋剂
化学
材料科学
无机化学
光电子学
作者
Kh. Allachen,M. Tapiero,Z. Guellil,J. P. Zielinger,Jean-Claude Launay
标识
DOI:10.1016/s0022-0248(98)80239-x
摘要
Abstract Semi-insulating Cd 1- x Zn x Te:V crystals, for x = 0.01, 0.04, 0.07 and 0.10, are investigated in comparison with CdTe : V i.e. for x = 0, and with undoped CdTe by spectral response of steady-state photoconductivity at various temperatures, mainly in the near infrared, and by thermal dependence of the intrinsic photoconductivity. The results, which confirm that V is indeed the dominant carrier donor, are discussed in terms of electronic transitions for the two vanadium charge states V 2+ and V 3+ , related to the zinc concentration. It is found that the magnitude of some of these transitions vary strongly with temperature due to a two-step photo-thermal ionization process.
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