符号(数学)
凝聚态物理
霍尔效应
自旋(空气动力学)
半导体
自旋霍尔效应
简单(哲学)
物理
材料科学
量子力学
自旋极化
电子
磁场
热力学
数学
认识论
数学分析
哲学
标识
DOI:10.1103/physrevlett.95.156601
摘要
First-principles calculations are applied to study spin Hall effect in semiconductors and simple metals. We found that intrinsic spin Hall conductivity (ISHC) in realistic materials shows rich sign changes, which may be used to distinguish the effect from the extrinsic one. The calculated ISHC in n-doped GaAs can be well compared with experiment, and it differs from the sign obtained from the extrinsic effect. On the other hand, the ISHC in W and Au, which shows opposite sign respectively, is robust and not sensitive to the disorder.
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