铁电性
材料科学
量子隧道
电介质
极化(电化学)
凝聚态物理
图层(电子)
光电子学
纳米尺度
金属
纳米技术
化学
物理
物理化学
冶金
作者
Sun Ping,Yin‐Zhong Wu,Tianyi Cai,Sheng Ju
摘要
Ferroelectric dead layer is intrinsic and inevitable at the metal-ferroelectrics interface. In general, it is detrimental to the application of nanoscale devices; however, in ferroelectric tunneling junctions with ferroelectric dead layer, an enhanced tunneling electroresistance (TER) can be achieved when the nonswitchable interface polarization at both metal-ferroelectrics interfaces points to the ferroelectric center. The larger the interface polarization, the stronger the TER. In addition, low dielectric constant of dead layer will favor such enhancement. Our results provide an alternative route for achieving larger TER in ferroelectric junctions.
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