断裂韧性
材料科学
断裂(地质)
硅
复合材料
Crystal(编程语言)
模式(计算机接口)
光电子学
计算机科学
程序设计语言
操作系统
作者
Shigeki Nakao,Taeko Ando,Mitsuhiro Shikida,Kazuo Sato
标识
DOI:10.1088/0960-1317/18/1/015026
摘要
A change in the fracture mode of a micrometer-sized single-crystal-silicon (SCS) film was observed at a temperature slightly higher than room temperature (RT). Silicon films with a notch on one side were tested under tensile stress at temperatures ranging from RT to 500 °C. The mean fracture toughness was 1.28 MPa at RT and the value remained similar up to 60 °C. However, it drastically increased to nearly twice this value above 70 °C. Differences in the fracture mode and dislocation activity were found by scanning and transmission electron microscopy (SEM and TEM). These results show that the fracture mode changed even at a low temperature near 70 °C due to the activation of dislocations at the notch tip.
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