期刊:IEEE Photonics Technology Letters [Institute of Electrical and Electronics Engineers] 日期:2011-02-16卷期号:23 (8): 525-527被引量:179
标识
DOI:10.1109/lpt.2011.2114336
摘要
In this letter, a 2 × 2 thermo-optic waveguide-based switch with ultralow power consumption is demonstrated and fabricated using a standard complementary metal-oxide-semi conductor (CMOS) process. The phase arms are suspended by removing adjacent SiO 2 and 120 μm of the underlying Si, while leaving a few SiO 2 beams to support the suspended phase arms for the purpose of structural strength. As compared to the switch without isolation layer, a significant reduction of >;98% in power consumption is achieved. It is realized by preventing the heat from leaking out of the phase arms due to the presence of the air isolation layer. Our device shows an extinction ratio of over 23 dB at 1550 nm for TE mode with an ultralow power consumption of 0.49 mW. The response time is 266 μs, including the raise time of 144 μs and the fall time of 122 μs.