太阳能电池
材料科学
制作
图层(电子)
带隙
薄膜
异质结
电极
双层
兴奋剂
光电子学
电阻率和电导率
缓冲器(光纤)
分析化学(期刊)
化学工程
复合材料
纳米技术
化学
膜
电气工程
病理
物理化学
医学
色谱法
工程类
替代医学
生物化学
作者
M. S. Sreejith,D. R. Deepu,C. Sudha Kartha,K. Rajeevkumar,K. P. Vijayakumar
摘要
CuZnS is a promising material for solar cells, having mixed structure of CuxS and ZnS. In CuZnS thin films prepared by Chemical Spray Pyrolysis, it was observed that the material can be changed from n-type to p-type and electrical conductivity can be increased by 4 orders by just varying the Cu concentration. Increase in concentration of Cu also leads to decrease of band gap from 3.4 eV to 1.8 eV. Films of high concentration of Cu can be used as good absorber and Cu-poor films as buffer/window layer in solar cells. A bilayer heterojunction photovoltaic device could be fabricated using automated spray machine. Here, CuZnS was the absorber layer and In2S3 was the buffer layer. Using Ag as top electrode, J-V characteristics of the cell was recorded. For the optimum doped cell, the parameters obtained were Voc = 0.451 V, Jsc = 5.47 mA/cm2, FF = 42.2%, and η = 1.04%.
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