CMOS芯片
噪声系数
自动增益控制
前端和后端
线性
电气工程
低噪声放大器
电子工程
计算机科学
噪音(视频)
电信
放大器
工程类
操作系统
图像(数学)
人工智能
作者
A. Samelis,Edward A. Whittaker,Michael Ball,Alasdair Bruce,John Nisbet,Lui Lam,William Vaillancourt
标识
DOI:10.1109/pawr.2014.6825719
摘要
A SiGe BiCMOS, CMOS/SOI front-end module (FEM) for WLAN applications in the 2GHz band is presented. In the transmit mode it delivers 29dB small-signal gain and 3% EVM at 19.3dBm. In the receive mode, it achieves a noise figure of 1.85dB, 14dB gain, and an IIP3 level of 3dBm with 9mA current consumption. The FEM employs bias control circuitry that can be configured to address the linearity requirements of the WLAN standards family under varying environmental and channel conditions, including the emerging 802.11ac standard.
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