高电子迁移率晶体管
饱和(图论)
速度饱和
饱和速度
材料科学
大气温度范围
阈值电压
工作(物理)
阈下传导
电压
温度测量
光电子学
电气工程
凝聚态物理
计算物理学
电子工程
物理
晶体管
工程类
热力学
MOSFET
数学
组合数学
作者
Nika Sahebghalam,Majid Shalchian,Amirali Chalechale,Farzan Jazaeri
标识
DOI:10.1109/ted.2022.3184662
摘要
Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the core École Polytechnique Fédérale de Lausanne (EPFL) HEMT model, the temperature dependence of various parameters including mobility, saturation velocity, critical electric fields, access region resistance, threshold voltage, and subthreshold slope was taken into account in the model. The accuracy of the developed model is validated by the TCAD simulation results and experimental data over a wide range of ambient temperatures from −20 °C to 500 °C.
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