肖特基二极管
材料科学
肖特基势垒
工作职能
光电子学
泄漏(经济)
工作(物理)
金属半导体结
击穿电压
电压
金属
电子工程
整流器(神经网络)
阻塞(统计)
电气工程
计算机科学
冶金
二极管
机械工程
工程类
经济
宏观经济学
循环神经网络
计算机网络
随机神经网络
机器学习
人工神经网络
作者
Sung-Kyu Kwon,Doohyung Cho,Jong-Il Won,Dong Yun Jung,Hyun-Gyu Jang,Kun-Sik Park
标识
DOI:10.1109/iceic54506.2022.9748703
摘要
The effect of work function on metal/Si Schottky junction have been studied to examine the contribution of forward and reverse blocking properties. TCAD simulation have been used to study in conventional SBR and SC-SBR structure. We found that the SC-SBR exhibits similar electrical characteristics at low work function of the source metal with lower leakage current than conventional SBR. Thus, we can achieve the low forward voltage drop and leakage current characteristics plus enhanced EAS properties while maintaining the breakdown voltage characteristics by varying the work function of Schottky metal in SC-SBR.
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