发光二极管
亮度
光电子学
二极管
材料科学
蓝光
外延
氮化物
光学
物理
纳米技术
图层(电子)
作者
G. B. Stringfellow,M. G. Craford
出处
期刊:Academic Press eBooks
[Academic Press]
日期:1997-01-01
被引量:30
摘要
Materials issues in high brightness light emitting diodes, G.B. Stringfellow overview of device issues in high brightness light emitting modes, M.G. Craford AIGaAs red LEDs, F.M. Steranka OMVPE growth of AIGaInP for high-efficiency visible light emitting diodes, M.J. Peanasky and C.P. Kuo AIGaInP light-emitting diodes, F.A. Kish and R.M. Fletcher applications for high brightness LEDs, M.W. Hodapp organometallic vapour phase epitaxy of GaN for high brightness blue light emitting diodes, I. Akasaki and H. Amano III-V nitride based uv/blue/green/yellow LEDs and LDs, S. Nakamura.
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