兴奋剂
密度泛函理论
材料科学
电子结构
Atom(片上系统)
色散(光学)
电子能带结构
吸收(声学)
航程(航空)
化学物理
凝聚态物理
计算化学
光电子学
物理
光学
化学
计算机科学
复合材料
嵌入式系统
作者
Gang Chen,Shang‐Peng Gao
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2012-10-01
卷期号:21 (10): 107101-107101
被引量:38
标识
DOI:10.1088/1674-1056/21/10/107101
摘要
The structures of the heptazine-based graphitic C3N4 and the S-doped graphitic C3N4 are investigated by using the density functional theory with a semi-empirical dispersion correction for the weak long-range interaction between layers. The corrugated structure is found to be energetically favorable for both the pure and the S-doped graphitic C3N4. The S doptant is prone to substitute the N atom bonded with only two nearest C atoms. The band structure calculation reveals that this kind of S doping causes a favorable red shift of the light absorption threshold and can improve the electroconductibility and the photocatalytic activity of the graphitic C3N4.
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