X射线光电子能谱
原子层沉积
沉积(地质)
单层
图层(电子)
氧化铝
分析化学(期刊)
氧化物
铝
化学
原子层外延
材料科学
无机化学
化学工程
纳米技术
环境化学
有机化学
古生物学
沉积物
工程类
生物
作者
Marko Milojević,F. S. Aguirre‐Tostado,Christopher L. Hinkle,H. C. Kim,Eric M. Vogel,J. Kim,Robert M. Wallace
摘要
The reduction in III–V interfacial oxides by atomic layer deposition of Al2O3 on InGaAs is studied by interrupting the deposition following individual trimethyl aluminum (TMA) and water steps (half cycles) and interrogation of the resultant surface reactions using in situ monochromatic x-ray photoelectron spectroscopy (XPS). TMA is found to reduce the interfacial oxides during the initial exposure. Concentrations of Ga oxide on the surface processed at 300 °C are reduced to a concentration on the order of a monolayer, while AsOx species are below the level of detection of XPS.
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