神经形态工程学
材料科学
记忆电阻器
铁电性
掺杂剂
多铁性
钙钛矿(结构)
纳米技术
兴奋剂
计算机科学
光电子学
电子工程
人工神经网络
人工智能
化学
电介质
工程类
结晶学
作者
Bai Sun,Guangdong Zhou,Linfeng Sun,Hongbin Zhao,Yuanzheng Chen,Feng Yang,Yong Zhao,Qunliang Song
出处
期刊:Nanoscale horizons
[The Royal Society of Chemistry]
日期:2021-01-01
卷期号:6 (12): 939-970
被引量:94
摘要
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO3 multiferroic perovskite materials make them promising candidates for application in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain wall movement originated from the ABO3 multiferroic perovskite materials promotes its memristive effect, which further highlights data storage, information processing and neuromorphic computing in diverse artificial intelligence applications. In particular, ion doping, electrode selection, and interface modulation have been demonstrated in ABO3-based memristive devices for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. These approaches presented today including controlling the dopant in the active layer, altering the oxygen vacancy distribution, modulating the diffusion depth of ions, and constructing the interface-dependent band structure were believed to be efficient methods for obtaining unique resistive switching (RS) behavior for various applications. In this review, internal physical dynamics, preparation technologies, and modulation methods are systemically examined as well as the progress, challenges, and possible solutions are proposed for next generation emerging ABO3-based memristive application in artificial intelligence.
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