波克尔效应
材料科学
钛酸钡
光电子学
绝缘体上的硅
薄脆饼
硅
外延
硅光子学
光学
纳米技术
电介质
物理
激光器
图层(电子)
作者
Agham Posadas,Vincent Stenger,J. DeFouw,Goran Z. Mashanovich,Daniel Wasserman,Alexander A. Demkov
标识
DOI:10.1109/siphotonics55903.2023.10141930
摘要
Single crystal barium titanate with both c-axis and a-axis orientation have been epitaxially integrated on silicon-on-insulator wafers. Electro-optic Mach-Zehnder modulators with both X-cut and Z-cut configurations are fabricated that exhibit Pockels coefficients of 180 and 130 pm/V, respectively, with Vpi-length values of <5 V-mm.
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