Uniformity improvement of thickness and net donor concentration in halide vapor phase epitaxial β-Ga2O3 wafers prepared on miscut angle substrates

Abstract High uniformity of the thickness and net donor concentrations ( N d - N a ) in 100 mm diameter β -Ga 2 O 3 (001) epitaxial wafer prepared by halide vapor phase epitaxy was demonstrated. An epitaxial wafer grown on a substrate with a miscut angle near 0° generated a specific epitaxial region with a lower growth rate and a higher N d - N a than the rest of the region, which deteriorated the wafer uniformity. In contrast, epitaxial wafers prepared on substrates with a miscut angle of –0.1° suppressed the occurrence of the specific epitaxial region, and an average thickness after chemical mechanical polishing of 10.6 μ m with 5% tolerance and an average N d - N a without intentionally doping of 1.1 × 10 16 cm −3 within 7% tolerance were successfully obtained.