偏压
跨导
缓冲放大器
瞬态响应
低压差调节器
瞬态(计算机编程)
CMOS芯片
电容
电子工程
晶体管
电压
材料科学
控制理论(社会学)
跌落电压
放大器
工程类
物理
电气工程
计算机科学
电压调节器
人工智能
操作系统
量子力学
控制(管理)
电极
作者
Nan Liu,Y. Xie,Jianping Guo
标识
DOI:10.1016/j.mejo.2023.105724
摘要
An improved flipped voltage follower (FVF) based output-capacitorless low-dropout regulator (OCL-LDO) with self-feedback biasing has been proposed in this paper, achieving better performance without increasing the number of transistors or adding complicated circuits for the customized transient performance. With the proposed self-feedback biasing technique, the equivalent transconductance of the error amplifier is boosted effectively, so that the DC gain of the proposed FVF-LDO is increased and thus both the load and line regulations are improved. At the same time, the dynamic bias current is generated to enhance the transient response. In addition, a single-transistor-based fast discharge loop is added to further enhance the transient response. The proposed OCL-LDO has been designed and fabricated in 180-nm CMOS technology. The chip area is 0.017 mm2, and the measured quiescent current is 79 μA. The proposed LDO can be stable with 0 ∼ 100-pF output capacitance under current ranges from 0 ∼ 100 mA, and the FoM is as small as 0.0036 ps when loading current changes from 0 to 100 mA.
科研通智能强力驱动
Strongly Powered by AbleSci AI