超晶格
物理
凝聚态物理
带隙
双层
材料科学
膜
遗传学
生物
作者
Fanfan Wu,Qiaoling Xu,Qinqin Wang,Yanbang Chu,Li Lü,Jian Tang,Jieying Liu,Jinpeng Tian,Yiru Ji,Le Liu,Yalong Yuan,Zhiheng Huang,Jiaojiao Zhao,Xiaozhou Zan,Kenji Watanabe,Takashi Taniguchi,Dongxia Shi,Gangxu Gu,Yang Xu,Lede Xian,Wei Yang,Luojun Du,Guangyu Zhang
标识
DOI:10.1103/physrevlett.131.256201
摘要
Moir\'e superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report evidence of possible room-temperature correlated electronic states and layer-hybridized SU(4) model simulator in AB-stacked ${\mathrm{MoS}}_{2}$ homobilayer moir\'e superlattices. Correlated insulating states at moir\'e band filling factors $v=1$, 2, 3 are unambiguously established in twisted bilayer ${\mathrm{MoS}}_{2}$. Remarkably, the correlated electronic state at $v=1$ shows a giant correlated gap of $\ensuremath{\sim}126\text{ }\text{ }\mathrm{meV}$ and may persist up to a record-high critical temperature over 285 K. The realization of a possible room-temperature correlated state with a large correlated gap in twisted bilayer ${\mathrm{MoS}}_{2}$ can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moir\'e superlattice effects on electronic correlations. Furthermore, extreme large nonlinear Hall responses up to room temperature are uncovered near correlated electronic states, demonstrating the quantum geometry of moir\'e flat conduction band.
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