材料科学
发光二极管
光电子学
光致发光
量子阱
发光
蓝移
光学
调制(音乐)
二极管
拉伤
阴极发光
波长
弯曲
量子效率
自发辐射
激光器
物理
复合材料
内科学
医学
声学
作者
Renfeng Chen,Yin Yu,Lulu Wang,Yaqi Gao,Rui He,Junxue Ran,Junxi Wang,jinmin li,Tongbo Wei
出处
期刊:Optics Letters
[The Optical Society]
日期:2022-11-07
卷期号:47 (23): 6157-6157
被引量:4
摘要
We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) structure. It is found that an a-axis oriented MWA structure induces more c-axis compressive strain than a flat structure when a convex bending strain is applied. Moreover, the photoluminescence (PL) intensity exhibits a tendency to increase first and then decrease under the enhanced compressive strain. Specifically, light intensity reaches a maximum of about 123% accompanied by 1.1-nm blueshift, and the carrier lifetime comes to the minimum simultaneously. The enhanced luminescence characteristics are attributed to strain-induced interface polarized charges, which modulate the built-in field in InGaN/GaN MQWs and could promote the radiative recombination of carriers. This work opens a pathway to drastically improve InGaN-based long-wavelength micro-LEDs with highly efficient piezo-phototronic modulation.
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